選擇品牌
主營品牌
RJH1CF4RDPQ-80
品牌：瑞薩（Renesas）
產品：IGBT
在線閱讀：RJH1CF4RDP.pdf
RJH1CF4RDPQ-80
Silicon N Channel IGBT
High Speed Power Switching
Silicon N Channel IGBT
High Speed Power Switching
產品詳情
Features
Voltage resonance circuit use
Reverse conducting IGBT with monolithic body diode
High efficiency device for induction heating
Low collector to emitter saturation voltage
VCE(sat) = 2.0 V typ. (at IC = 20 A, VGE = 15V, Tj = 25°C)
Gate to emitter voltage rating ±30 V
Pb-free lead plating
浙公網安備 33010502000757號