HVU187
Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator
Features
Ordering Information Type No. Laser Mark Package Code HVU187 D URP
Absolute Maximum Ratings(Ta = 25°C)
Item |
Symbol |
Value |
Unit |
Reverse voltage |
VR |
60 |
V |
Forward current |
IF |
50 |
mA |
Power dissipation |
Pd |
100 |
mW |
Junction temperature |
Tj |
125 |
°C |
Junction temperature |
Tstg |
?55 to +125 |
°C |
Electrical Characteristics(Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
Test Condition |
Reverse current |
IR |
- |
- |
100 |
nA |
VR = 60 V |
Forward voltage |
VF |
- |
- |
1 |
V |
IF = 10 mA |
Capacitance |
C |
- |
- |
2.4 |
pF |
VR = 0 V, f = 1 MHz |
Forward resistance |
rf |
3.5 |
- |
5.5 |
Ω |
IF = 10 mA, f = 100 MHz |
ESD-Capability *1 |
- |
200 |
- |
- |
V |
C = 200 pF, Both forward and reverse |
Note: 1. Failure criterion; IR ≥ 100 nA at VR = 60 V