Features
Outline
Absolute Maximum Ratings(Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
-120 |
V |
Collector to emitter voltage |
VCEO |
-100 |
V |
Emitter to base voltage |
VEBO |
-6 |
V |
Collector current |
IC |
-1.0 |
A |
Collector peak current |
IC (peak) *1 |
-2.0 |
A |
Collector power dissipation |
PC |
0.9 |
W |
Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Electrical Characteristics
Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -120 — — V IC = -100 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO -100 — — V IC = -10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO -6 — — V IE = -100 mA, IC = 0 Collector cutoff current ICBO — — -500 nA VCB = -120 V, IE = 0 Emitter cutoff current IEBO — — -500 nA VEB = -6 V, IC = 0 DC current transfer ratio hFE1 140 — 350 — VCE = -2 V, IC = -150 mA hFE2 40 — — — VCE = -5 V, IC = Collector to emitter saturation voltage VCE(sat) — — -0.5 V IC = -500 mA, IB = -50 mA Base to emitter saturation voltage VBE(sat) — — -1.1 V IC = -500 mA, IB = -50 mA